| ‘lllvVISHAYQV 5: 0.01 lnslanlaneous Forward Current (A) 0.5 1.0 wwwymhaycom RGP02-xxE Vishay General Semiconductor Pulse Width : 300 Us1 % Duty cycie Junction Capacitance (pF) 1.4 16 1.5 20 2.2 2.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics 100 0 0.1 instantaneous Reverse Current (HA) Percent of Rated Peak Reverse Voltage (‘7/n) Fig. 4 - Typical Reverse Characteristics PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Revision: 11-Dec-13 Do_2o4AL (Do_41) (1 1.0 (25 4)MIN. 0.107 (2 7) *l V7 i0.205 (5.21 DIA 0.160 (4.11 I n (25.4) MIN. 0 026 (0.66) 0 023 (0.53) ’ i DIA. 3 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Document N umber: 88699 For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |